Sr GaN Design Engineer, Military Projects (11784534) Freescale Semiconductor Inc.
THIS JOB HAS EXPIRED Primary Location: US-AZ-Tempe (AZ34)
Job Field: RF
Education Level: Master's Degree
Job Type: Experienced
Relocation Available?: Yes
Freescale Semiconductor is the global leader in embedded processing solutions, supporting the automotive, consumer, industrial and networking markets. From microprocessors and microcontrollers to sensors, analog ICs and connectivity ? our vital technologies are the foundation to the innovations that make our world greener, safer, healthier and more connected. For more than 50 years, Freescale has played an essential role in the evolution of embedded solutions, and we want you to be a part of our next half-century. Freescale is committed to attracting great people of all styles, thoughts, cultures and backgrounds. We are driven by a culture of ownership, teamwork, and results ? an engagement worldwide of more than 18,000 employees.
Freescale?s Radio Frequency (RF) Group is the number one supplier of RF power transistors for cellular infrastructure, supporting all major bands and transmission standards. Our RF power transistor technology is also used in products for the broadcast, avionics and ISM markets. Freescale also provides monolithic microwave ICs (MMICs) for cellular infrastructure applications. As a pioneer in RF technology, Freescale was the first to develop RF power transistors in LDMOS technology; the first to implement industry standards in air-cavity ceramic and over-molded plastic packing for RF power devices; -and the first to deliver a 2 GHz discrete RF power transistor in over-molded plastic package capable of a 200 degree Celsius junction temperature.
The Senior GaN Design Engineer will design and develop power GaN transistors and ICs in cooperation with Freescale?s device development, marketing, and supply chain teams for military products, advanced radar products, cellular infrastructure, back haul and VSAT applications.
An individual with theoretical and practical knowledge of Microwave and Millimeter wave active devices, circuits and technologies (GaAs and GaN), with a strong product design and development record at frequencies from 2 to 40 GHz is a plus.
BSEE or MSEE, PhD in in related field with at least 5 years of industry experience.
Design and develop power GaN devices. Primary focus is on high power (> 10W) transistors and ICs (up to 10W) at frequencies from 10MHz through 12 GHz. The design of X-band, Ka, K, and Ku band products a plus.
Perform complete design of internally matched power transistors in L, S and C Band.
Assists in design, development, and selection of power die for use in transistor products.
Perform competitive analysis of devices which Freescale competes and/or will compete.
Provide feedback to foundry engineers to perform chip, device modeling and evaluation to assist in design efforts.
Assists in the design of high frequency power transistor packages.
Design application test circuits to demonstrate product capability.
Assist product engineering and marketing with new product introduction.
Write technical papers describing product applications and circuit design methods. Present technical papers at selected conferences.
This candidate must also meet the following criteria:
Be a US citizen
Be fluent in English
Have a valid US passport
Be willing to sign a DoD ITAR NDA
||Tempe, AZ |
THIS JOB HAS EXPIRED