SR MOCVD R & D Scientist
Reporting to the R&D MOCVD manager, responsible for the design of new device structures and the development of MOCVD process for GaN LEDs, to achieve world-leading-position of high brightness and low cost.
â€¢ Work with existing Epi engineers/scientists to further develop GaN MOCVD process recipes for multiple LED platforms: PSS, flip chip, GaN on Silicon .
â€¢ Develop Epi process recipe to improve yield and performance characteristics of GaN LED wafers and aggressively reduce the cycle time of the growth process.
â€¢ Direct reactor and characterization technicians as needed to schedule process runs and measure results.
â€¢ Analyze data from chip fabrication and measurement for feedback into Epi process development.
â€¢ International travel in support of Epi process transfer with manufacturing and development partners may be required.
â€¢ Ph.D. in Materials Science, Elec. Eng., Physics, or equivalent.
â€¢ Minimum 2-year direct experience with developing MOCVD processes for GaN LEDs.
â€¢ Extensive knowledge and in-depth understanding of device physics required for high efficiency LED operation.
â€¢ Experience with standard compound semiconductor materials characterization methods ( PL, AFM, XRD, SIMS, Nomarski Microscope, etc. ).
â€¢ Experience with working closely with device teams to optimize device performance and perform failure mode analysis on defects.
â€¢ Previous hands on experience with daily operations of MOCVD process equipment.
â€¢ Experienced with new reactor qualification and process troubleshooting.
â€¢ Previous experience with Veeco MOCVD systems desired.
â€¢ Previous experience growing GaN on Si(111) is desirable.
The above information on this description has been designed to indicate the general nature, and level, of the work performed by this position. It is not designed to contain, or be interpreted, as a comprehensive inventory of all duties, responsibilities and qualifications required.
|Location:||Livermore, CA |